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2SD2138A Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SD2138A Datasheet(HTML) 1 Page - Panasonic Semiconductor |
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1 / 2 page  1 Power Transistors 2SD2138, 2SD2138A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1418 and 2SB1418A s Features q High forward current transfer ratio hFE which has satisfactory linearity q Allowing supply with the radial taping s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 80 60 80 5 4 2 15 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 2SD2138 2SD2138A 2SD2138 2SD2138A TC=25°C Ta=25 °C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Turn-off time Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 * VBE VCE(sat) fT ton toff Conditions VCE = 60V, IE = 0 VCE = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A VCE = 4V, IC = 2A IC = 2A, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 2A, IB1 = 8mA, IB2 = –8mA, VCC = 50V min 60 80 1000 2000 typ 20 0.4 4 max 100 100 100 100 100 10000 2.8 2.5 Unit µA µA µA V V V MHz µs µs 2SD2138 2SD2138A 2SD2138 2SD2138A 2SD2138 2SD2138A *h FE2 Rank classification Rank Q P hFE2 2000 to 5000 4000 to 10000 Unit: mm Internal Connection 1:Base 2:Collector 3:Emitter MT4 Type Package 1.0 10.0 ±0.2 0.55 ±0.1 2.5 ±0.2 2.5 ±0.2 5.0 ±0.1 2.25 ±0.2 1.2 ±0.1 0.65 ±0.1 0.55 ±0.1 C1.0 90 ° C1.0 123 1.05 ±0.1 0.35 ±0.1 B E C |
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