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HMC281 Datasheet(PDF) 5 Page - Hittite Microwave Corporation

Part No. HMC281
Description  GaAs MMIC LOW NOISE AMPLIFIER 18 - 32 GHz
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Maker  HITTITE [Hittite Microwave Corporation]
Homepage  http://www.hittite.com
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HMC281 Datasheet(HTML) 5 Page - Hittite Microwave Corporation

   
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1 - 58
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
MICROWAVE CORPORATION
FEBRUARY 2001
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling,
Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing
RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to
accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-
tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible
in order to minimize bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.076 mm x 0.013
mm (3mil x 0.5 mil) is recommended to minimize inductance on the RF ports. 0.025 mm (1 mil) diameter ball or wedge
bonds are acceptable for DC bias connections.
RF bypass capacitors should be used on the Vdd & Vgg inputs. 100 pF single layer capacitors (mounted eutectically
or by conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip are recommended.
HMC281 LOW NOISE AMPLIFIER 18 - 32 GHz
HMC281
V
02.0500


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