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M62398P Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. M62398P
Description  8BIT 12CH I2C BUS D.A CONVERTER WITH BUFFER AMPLIFIERS
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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M62398P Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

   
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MITSUBISHI ELECTRIC
1997-5-28D.rev
MITSUBISHI <Dig./Ana. INTERFACE>
M62398P,FP
8BIT 12CH I C BUS D–A CONVERTER WITH BUFFER AMPLIFIERS
( / 7)
2
ABSOLUTE MAXIMUM RATINGS
ELECTRIC CHARACTERISTICS
(VCC=13V,VDD=Vref U1,2=+5V±10%,GND=VrefL=0V,Ta=–20~85°C,unless otherwise noted)
Digital part
<
>
Symbol
VDD
Supply voltage
IILK
Input leak current
VIL
Input low voltage
VIH
Input high voltage
Parameter
Test conditions
VIN=0~VDD
Ratings
MIN
TYP
MAX
0.8VDD
–10
10
0.2VDD
Unit
V
V
V
IDD
Supply current
mA
CLK=1MHz operation
IAO=0µA
4.5
5.0
5.5
µ A
1
Analog part
<
>(VCC=13V,VDD=VrefU1,2=+5V±10%,GND=VrefL=0V,Ta=–20~85°C,unless otherwise noted)
Supply voltage
CLK=1MHz Operation
IAO=0µA
Supply current
13
V
mA
Symbol
Parameter
Test conditions
Ratings
MIN
TYP
MAX
Unit
D–A converter upper
reference voltage input current
VrefU=5V,VrefL=0V
Data condition:
at maximum current
mA
D–A converter upper
reference voltage range
The output dose not
necessarily be the values
within the reference
voltage setting range.
D–A converter lower
reference voltage range
Buffer amplifier
output voltage range
IAO=±500µA
IAO=±1.0mA
3.5
V
GND
1.5
V
0.1
VCC-0.1
V
0.2
V
Buffer amplifier
output drive range
Upper side saturation
voltage=0.3V
Lower side saturation
voltage=0.2V
–2.5
2.5
mA
VCC
ICC
IrefU
VrefU
VrefL
VAO
IAO
SDL
SL
SZERO
SFULL
SR
Differential nonlinearity error
Nonlinearity error
Zero code error
Full scale error
VrefU=4.79V
VrefL=0.95V
VCC=13V(36mV/LSB)
without load (IAO=0)
–1.0
1.0
–1.5
1.5
–2.0
2.0
–2.0
2.0
0.2
LSB
LSB
LSB
LSB
2.4VDD
2.0
4.0
1.2
2.5
VDD
Output slew rate
V/µs
VCC-0.2
3
Symbol
VCC
VDD
VrefU1,2
VinD
Pd
Topr
Tstg
Supply voltage
Supply voltage
D–A converter
upper reference voltage
Digital input voltage
Power dissipation
Operating temperature
Storage temperature
Parameter
Conditions
–0.3~13.5
–0.3~7.0
–0.3~VDD+0.3
–20~85
–40~125
Unit
V
V
V
V
mW
Ratings
°C
465(DIP) /421(FP)
VDD
°C


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