TRS12A65F datasheet(2/6 Pages) TOSHIBA

Part #	TRS12A65F

Description	SiC Schottky Barrier Diode

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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TRS12A65F

2

4.

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25

= 25

= 25 



))))

Characteristics

Repetitive peak reverse voltage

Forward DC current

Forward pulse current

Power dissipation

Non-repetitive peak forward surge current

Junction temperature

Storage temperature

Mounting torque

Isolation voltage (RMS)

Symbol

VRRM

IF(DC)

IFP

PD

IFSM

Tj

Tstg

TOR

VISO(RMS)

Note

(Note 1)

(Note 2)

(Note 3)

(Note 4)

Rating

650

12

120

41

92

175

-55 to 175

0.6

2000

Unit

V

A

W

A



Nm

V

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: t = 50 µs

Note 2: Tc = 25

Note 3: f = 50 Hz (half-sine wave, t = 10 ms)

Note 4: t = 1 s

5.

5. Thermal Characteristics

Thermal Characteristics

Characteristics

Thermal resistance (junction-to-case)

Thermal resistance (junction-to-ambient)

Symbol

Rth(j-c)

Rth(j-a)

Test Condition



Max

3.65

62.5

Unit

/W

6.

6. Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25 



))))

Characteristics

Forward voltage

Reverse current

Junction capacitance

Symbol

VF(1)

VF(2)

IR

Cj

Test Condition

IF = 6 A (pulse measurement)

IF = 12 A (pulse measurement)

VR = 650 V (pulse measurement)

VR = 650 V, f = 1 MHz

Min



Typ.

1.2

1.45

0.6

44

Max



1.6

60



Unit

V

µA

pF

2019-06-25

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

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