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TRS12A65F Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TRS12A65F Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TRS12A65F 2 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Repetitive peak reverse voltage Forward DC current Forward pulse current Power dissipation Non-repetitive peak forward surge current Junction temperature Storage temperature Mounting torque Isolation voltage (RMS) Symbol VRRM IF(DC) IFP PD IFSM Tj Tstg TOR VISO(RMS) Note (Note 1) (Note 2) (Note 3) (Note 4) Rating 650 12 120 41 92 175 -55 to 175 0.6 2000 Unit V A A W A Nm V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: t = 50 µs Note 2: Tc = 25 Note 3: f = 50 Hz (half-sine wave, t = 10 ms) Note 4: t = 1 s 5. 5. 5. 5. Thermal Characteristics Thermal Characteristics Thermal Characteristics Thermal Characteristics Characteristics Thermal resistance (junction-to-case) Thermal resistance (junction-to-ambient) Symbol Rth(j-c) Rth(j-a) Test Condition Max 3.65 62.5 Unit /W /W 6. 6. 6. 6. Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Forward voltage Forward voltage Reverse current Junction capacitance Symbol VF(1) VF(2) IR Cj Test Condition IF = 6 A (pulse measurement) IF = 12 A (pulse measurement) VR = 650 V (pulse measurement) VR = 650 V, f = 1 MHz Min Typ. 1.2 1.45 0.6 44 Max 1.6 60 Unit V V µA pF 2019-06-25 Rev.1.0 ©2018-2019 Toshiba Electronic Devices & Storage Corporation |
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