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GT50NR21 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # GT50NR21
Description  Discrete IGBTs Silicon N-Channel IGBT
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

GT50NR21 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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GT50NR21
1
Discrete IGBTs Silicon N-Channel IGBT
GT50NR21
GT50NR21
GT50NR21
GT50NR21
Start of commercial production
2010-09
1.
1.
1.
1. Applications
Applications
Applications
Applications
Dedicated to Voltage-Resonant Inverter Switching Applications
Note:
The product(s) described herein should not be used for any other application.
2.
2.
2.
2. Features
Features
Features
Features
(1)
6.5th generation
(2)
The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip.
(3)
Enhancement mode
(4)
High-speed switching
IGBT : tf = 0.20 µs (typ.) (IC = 50 A)
FWD : trr = 0.50 µs (typ.) (IF = 15 A)
(5)
Low saturation voltage : VCE(sat) = 1.8 V (typ.) (IC = 50 A)
(6)
High junction temperature : Tj = 175 (max)
3.
3.
3.
3. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
TO-3P(N)
1: Gate
2: Collector
3: Emitter
2014-01-07
Rev.3.0


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