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WSP4430 Datasheet(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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WSP4430 Datasheet(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
3 / 4 page www.doingter.cn — 3 — Qg Total Gate Charge 2,3 VGS=4.5V, VDS=15V, ID=20A --- 11.1 22 nC Qgs Gate-Source Charge 2,3 --- 1.85 3.7 nC Qgd Gate-Drain “Miller” Charge 2,3 --- 6.8 13 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage 3 VGS=0V,IS=1A,TJ=25℃ --- --- 1 V IS Continuous Source Current VG=VD=0V , Force Current --- --- 20 A ISM Pulsed Source Current --- --- 40 A Notes: Typical Characteristics: (T C=25℃ unless otherwise noted) 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. 1 TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform WSP4430 |
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