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TMS626812B Datasheet(PDF) 19 Page - Texas Instruments

Part No. TMS626812B
Description  1,048,576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
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TMS626812B Datasheet(HTML) 19 Page - Texas Instruments

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TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
19
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
general information for ac timing measurements
The ac timing measurements are based on signal rise and fall times equal to 1 ns (tT = 1 ns) and a midpoint
reference level of 1.5 V (INPUT = 2.8 V, 0 V) for LVTTL. For signal rise and fall times greater than 1 ns, the
reference level should be changed to VIH MIN and VIL MAX instead of the midpoint level. All specifications
referring to READ commands are valid for READ-P commands unless otherwise noted. All specifications
referring to WRT commands are also valid for WRT-P commands unless otherwise noted. All specifications
referring to consecutive commands are specified as consecutive commands for the same bank unless
otherwise noted.
Output
Under
Test
CL = 50 pF
Z = 50
Circuit for ac Measurements
Figure 8. LVTTL-Load Circuits
tCK
CLK
tT
tT
tT
tT
tIS, tCESP
tCL
DQ, A0 – A11, CS, RAS,
CAS, W, DQM, CKE
DQ, A0 – A11, CS, RAS,
CAS, W, DQM, CKE
tCH
tIH
tIH
tIS
Figure 9. Input-Attribute Parameters


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