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TMS626812B Datasheet(PDF) 8 Page - Texas Instruments

Part No. TMS626812B
Description  1,048,576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
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Manufacturer  TI [Texas Instruments]
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TMS626812B Datasheet(HTML) 8 Page - Texas Instruments

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TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
8
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
two-bank row-access operation
The two-bank feature allows access of information on random rows at a higher rate of operation than is possible
with a standard DRAM by activating one bank with a row address and, while the data stream is being accessed
to / from that bank, activating the second bank with another row address. When the data stream to or from the
first bank is completed, the data stream to or from the second bank can begin without interruption. After the
second bank is activated, the first bank can be deactivated to allow the entry of a new row address for the next
round of accesses. In this manner, operation can continue in an interleaved fashion. Figure 24 shows an
example of two-bank row-interleaving read bursts with automatic deactivate for a CAS latency of three and a
burst length of eight.
two-bank column-access operation
The availability of two banks allows the access of data from random starting columns between banks at a higher
rate of operation. After activating each bank with a row address (ACTV command), A11 can be used to alternate
READ or WRT commands between the banks to provide gapless accesses at the CLK frequency, provided all
specified timing requirements are met. Figure 25 is an example of two-bank column-interleaving read bursts
for a CAS latency of three and a burst length of two.
bank deactivation (precharge)
Both banks can be simultaneously deactivated (placed in precharge) by using the DCAB command. A single
bank can be deactivated by using the DEAC command. The DEAC command is entered identically to the DCAB
command except that A10 must be low and A11 is used to select the bank to be precharged (see Table 1).
A bank can also be deactivated automatically by using A10 during a read or write command. If A10 is held high
during the entry of a read or write command, the accessed bank (selected by A11) is automatically deactivated
upon completion of the access burst. If A10 is held low during the entry of a read or write command, that bank
remains active following the burst. The read and write commands with automatic deactivation are signified as
READ-P and WRT-P, respectively.
chip select (CS)
CS can be used to select or deselect the ’626812B for command entry, which can be required for multiple
memory-device decoding. If CS is held high on the rising edge of CLK (DESL command), the device does not
respond to RAS, CAS, or W until the device is selected again by holding CS low on the rising edge of CLK. Any
other valid command can be entered simultaneously on the same rising CLK edge of the select operation. The
device can be selected / deselected on a cycle-by-cycle basis (see Table 1 and Table 2). The use of CS does
not affect an access burst that is in progress; the DESL command can restrict only RAS, CAS, and W inputs
to the ’626812B.
data mask
The MASK command or its opposite, the data-in enable (ENBL) command (see Table 3), is performed on a
cycle-by-cycle basis to gate any data cycle within a read burst or a write burst. The application of DQM to a write
burst has no latency (nDID = 0 cycle), but the application of DQM to a read burst has a latency of nDOD = 2 cycles.
During a write burst, if DQM is held high on the rising edge of CLK, the data input is ignored on that cycle. When
DQM is held high nDOD cycles after the rising edge of the CLK during a read burst, the data output goes to the
high-impedance state. Figure 16 and Figure 28 show examples of data-mask operations.
CLK suspend / power-down mode
For normal device operation, CKE should be held high to enable CLK. If CKE goes low during the execution
of a READ (READ-P) or WRT (WRT-P) operation, the state of the DQ bus at the immediate next rising edge
of CLK is frozen at its current state, and no further inputs are accepted until CKE returns high. This is known


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