SUD50N06-12 datasheet(2/5 Pages) VISHAY

Part #	SUD50N06-12

Description	N-Channel 60-V (D-S) 175 C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SUD50N06-12

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 72385

S-31920—Rev. A, 15-Sep-03

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typa

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

60

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

2.0

4.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

VDS = 60 V, VGS = 0 V

1

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V, TJ = 125_C

50

mA

g

DSS

VDS = 60 V, VGS = 0 V, TJ = 175_C

250

m

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

50

A

VGS = 10 V, ID = 20 A

0.0095

0.012

Drain-Source On-State Resistanceb

rDS(on)

VGS = 10 V, ID = 20 A, TJ = 125_C

0.021

W

DS(on)

VGS = 10 V, ID = 20 A, TJ = 175_C

0.027

Forward Transconductanceb

gfs

VDS = 15 V, ID = 20 A

25

S

Dynamica

Input Capacitance

Ciss

2500

Output Capacitance

Coss

VGS = 0 V, VDS = 25 V, F = 1 MHz

400

pF

Reverse Transfer Capacitance

Crss

165

Gate Resistance

Rg

f = 1 MHz

2.1

W

Total Gate Chargec

Qg

40

60

Gate-Source Chargec

Qgs

VDS = 30 V, VGS = 10 V, ID = 50 A

13

nC

Gate-Drain Chargec

Qgd

DS

, GS

, D

12

Turn-On Delay Timec

td(on)

15

25

Rise Timec

tr

VDD = 30 V, RL = 0.6 W

11

20

ns

Turn-Off Delay Timec

td(off)

VDD = 30 V, RL = 0.6 W

ID ^ 50 A, VGEN = 10 V, RG = 2.5 W

30

50

ns

Fall Timec

tf

7

15

Source-Drain Diode Ratings and Characteristic (TC = 25_C)

Pulsed Current

ISM

100

A

Diode Forward Voltageb

VSD

IF = 50 A, VGS = 0 V

1.0

1.5

V

Source-Drain Reverse Recovery Time

trr

IF = 50 A, di/dt = 100 A/ms

40

80

ns

Notes

a.

Guaranteed by design, not subject to production testing.

b.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

c.

Independent of operating temperature.

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