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SUD50N06-12 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SUD50N06-12 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page SUD50N06-12 Vishay Siliconix New Product www.vishay.com 2 Document Number: 72385 S-31920—Rev. A, 15-Sep-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typa Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 2.0 4.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C 50 mA g DSS VDS = 60 V, VGS = 0 V, TJ = 175_C 250 m On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 50 A VGS = 10 V, ID = 20 A 0.0095 0.012 Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 20 A, TJ = 125_C 0.021 W DS(on) VGS = 10 V, ID = 20 A, TJ = 175_C 0.027 Forward Transconductanceb gfs VDS = 15 V, ID = 20 A 25 S Dynamica Input Capacitance Ciss 2500 Output Capacitance Coss VGS = 0 V, VDS = 25 V, F = 1 MHz 400 pF Reverse Transfer Capacitance Crss 165 Gate Resistance Rg f = 1 MHz 2.1 W Total Gate Chargec Qg 40 60 Gate-Source Chargec Qgs VDS = 30 V, VGS = 10 V, ID = 50 A 13 nC Gate-Drain Chargec Qgd DS , GS , D 12 Turn-On Delay Timec td(on) 15 25 Rise Timec tr VDD = 30 V, RL = 0.6 W 11 20 ns Turn-Off Delay Timec td(off) VDD = 30 V, RL = 0.6 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W 30 50 ns Fall Timec tf 7 15 Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM 100 A Diode Forward Voltageb VSD IF = 50 A, VGS = 0 V 1.0 1.5 V Source-Drain Reverse Recovery Time trr IF = 50 A, di/dt = 100 A/ms 40 80 ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. |
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