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2SD1205 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part No. 2SD1205
Description  Silicon NPN epitaxial planer type darlington(For low-frequency amplification)
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD1205 Datasheet(HTML) 1 Page - Panasonic Semiconductor

  2SD1205 Datasheet HTML 1Page - Panasonic Semiconductor 2SD1205 Datasheet HTML 2Page - Panasonic Semiconductor  
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1
Transistor
2SD1205, 2SD1205A
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
s Features
q
Forward current transfer ratio hFE is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: hFE
= 4000 to 2000.
q
A shunt resistor is omitted from the driver.
q
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC–71
3:Emitter
M Type Mold Package
6.9
±0.1
0.55
±0.1
0.45
±0.05
2.5
±0.1
1.0
1.5
1.5 R0.9
R0.9
0.85
2.5
2.5
1
2
3
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
30
60
25
50
5
750
500
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
2SD1205
2SD1205A
2SD1205
2SD1205A
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
ICBO
IEBO
VCBO
VCEO
VEBO
hFE
*1
VCE(sat)
VBE(sat)
fT
Conditions
VCB = 25V, IE = 0
VEB = 4V, IC = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IE = 100µA, IC = 0
VCE = 10V, IC = 500mA
*2
IC = 500mA, IB = 0.5mA
*2
IC = 500mA, IB = 0.5mA
*2
VCB = 10V, IE = –50mA, f = 200MHz
min
30
60
25
50
5
4000
typ
150
max
100
100
20000
2.5
3
Unit
nA
nA
V
V
V
V
V
MHz
Internal Connection
B
C
E
≈200Ω
*1h
FE Rank classification
Rank
Q
R
hFE
4000 ~ 10000 8000 ~ 20000
*2 Pulse measurement
2SD1205
2SD1205A
2SD1205
2SD1205A


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