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SSM4435M Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd

Part # SSM4435M
Description  P-Channel 30-V (D-S) MOSFET
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

SSM4435M Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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P-Channel 30-V (D-S) MOSFET
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
•
Load Switch
•
Battery Switch
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
d
Qg (Typ.)
- 30
0.0
18 at VGS = - 10 V
- 9.0
13 nC
0.0
24 at VGS = - 4.5 V
-
7.8
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 95 °C/W.
d. Based on TC = 25 °C.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
- 30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
- 9.0
A
TC = 70 °C
- 7.2
TA = 25 °C
- 7.0a, b
TA = 70 °C
- 5.6a, b
Pulsed Drain Current
IDM
- 30
Continuous Source-Drain Diode Current
TC = 25 °C
IS
- 3.5
TA = 25 °C
- 2.1a, b
Maximum Power Dissipation
TC = 25 °C
PD
4.2
W
TC = 70 °C
2.7
TA = 25 °C
2.5a, b
TA = 70 °C
1.6a, b
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, c
t
≤ 10 s
RthJA
40
50
°C/W
Maximum Junction-to-Foot
Steady State
RthJF
24
30
S
G
D
P-Channel MOSFET
S
S
D
D
D
S
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
SSM4435M
1


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