SSM4435M datasheet(4/9 Pages) VBSEMI | P-Channel 30-V (D-S) MOSFET

Part #	SSM4435M

Description	P-Channel 30-V (D-S) MOSFET

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Manufacturer	VBSEMI [VBsemi Electronics Co.,Ltd]

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

1

10

100

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

TJ = 150 °C

VSD -Source-to-Drain Voltage (V)

TJ = 25 °C

1.1

1.3

1.5

1.7

1.9

2.1

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.01

0.02

0.03

0.04

0.05

04

8

12

16

20

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

ID =7A

0

10

20

30

40

50

0.001

0.01

0.1

1

10

100

Time (s)

Safe Operating Area

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

100

1

0.1

1

10

100

0.01

10

0.1

TA =25 °C

Single Pulse

100 ms

1s

10 s

DC

Limited byRDS(on)*

BVDSS

Limited

10 ms

1ms

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SSM4435M

4

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