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IC42S8200 Datasheet(PDF) 31 Page - Integrated Circuit Solution Inc |
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IC42S8200 Datasheet(HTML) 31 Page - Integrated Circuit Solution Inc |
31 / 76 page 1+" 5& Integrated Circuit Solution Inc. 31 DR018-0A 07/10/2001 CAS latency = 2, 3, burst length = 4 Write Cycle Interruption Using the Precharge Command A write cycle can be interrupted by the execution of the precharge command before that cycle completes. The delay time (tWDL) from the precharge command to the point where burst input is invalid, i.e., the point where input data is no longer written to device internal memory is zero clock cycles regardless of the CAS. To inhibit invalid write, the DQM signal must be asserted HIGH with the precharge command. This precharge command and burst write command must be of the same bank, otherwise it is not precharge interrupt but only another bank precharge of dual bank operation. PRE 0 WRITE A0 COMMAND DQM I/O CLK DIN A0 DIN A1 DIN A2 DIN A3 tWDL=0 WRITE (CA=A, BANK 0) PRECHARGE (BANK 0) MASKED BY DQM PRE 0 WRITE A0 COMMAND I/O CLK DIN A0 DIN A1 DIN A2 DIN A3 tDPL WRITE (CA=A, BANK 0) PRECHARGE (BANK 0) CAS CAS CAS CAS CAS Latency 3 2 tWDL 00 tDPL 11 Inversely, to write all the burst data to the device, the precharge command must be executed after the write data recovery period (tDPL) has elapsed. Therefore, the precharge command must be executed on one clock cycle that follows the input of the last burst data item. CAS latency = 2, 3, burst length = 4 |
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