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DP8429D-70 Datasheet(PDF) 10 Page - National Semiconductor (TI) |
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DP8429D-70 Datasheet(HTML) 10 Page - National Semiconductor (TI) |
10 / 26 page DP8428DP8429 Mode Descriptions (Continued) while the RAS lines are low then the RASs go high tRFRH later The designer must be careful however not to violate the minimum RAS low time of the DRAMs He must also guarantee that the minimum RAS precharge time is not vio- lated during a transition from mode 1 to mode 5 when an access is desired immediately following a refresh If the processor tries to access memory while the DP8429 is in mode 1 WAIT states should be inserted into the proces- sor cycles until the DP8429 is back in mode 5 and the de- sired access has been accomplished (see Figure 9 ) Instead of using WAIT states to delay accesses when re- freshing HOLD states could be used as follows RFRQ could be connected to a HOLD or Bus Request input to the system When convenient the system acknowledges the HOLD or Bus Request by pulling M2 low Using this scheme HOLD will end as the RAS lines go low (RFIO goes high) Thus there must be sufficient delay from the time HOLD goes high to the DP8429 returning to mode 5 so that the RAS low time of the DRAMs isn’t violated as de- scribed earlier (see Figure 3 for mode 1 refresh with Hold states) To perform a forced refresh the system will be inactive for about four periods of RGCK For a frequency of 10 MHz this is 400 ns To refresh 128 rows every 2 ms an average of about one refresh per 16 ms is required With a RFCK period of 16 ms and RGCK period of 100 ns DRAM accesses are delayed due to refresh only 25% of the time If using the Hidden Refresh available in mode 5 (refreshing with RFCK high) this percentage will be even lower MODE 4 - EXTERNALLY CONTROLLED ACCESS In this mode all control signal outputs can be controlled directly by the corresponding control input The enabled RAS output follows RASIN CAS follows CASIN (with RC low) WE follows WIN and RC determines whether the row or the column inputs are enabled to the address outputs (see Figure 4 ) With RC high the row address latch contents are enabled onto the address bus RAS going low strobes the row ad- dress into the DRAMs After waiting to allow for sufficient row-address hold time (tRAH) after RAS goes low RC can go low to enable the column address latch contents onto the address bus When the column address is valid CAS going low will strobe it into the DRAMs WIN determines whether the cycle is a read write or read-modify-write ac- cess Refer to Figures 5a and 5b for typical Read and Write timing using mode 4 Page or Nibble mode may be performed by toggling CASIN once the initial access has been completed In the case of page mode the column address must be changed before Resistors required depends on DRAM load DRAMs Maybe 16k 64k 256k 1M For 4 Banks can drive 16 data bits a 6 Check Bits for ECC For 2 Banks can drive 32 data bits a 7 Check Bits for ECC For 1 Bank can drive 64 data bits a 8 Check Bits for ECC TLF8649 – 16 FIGURE 4 Typical Application of DP8429 Using External Control Access and Refresh in Modes 0 and 4 10 |
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