Power Transistors

1

2SC5546

Silicon NPN triple diffusion mesa type

For horizontal deflection output

I Features

• High breakdown voltage, and high reliability through the use of a

glass passivation layer

• High-speed switching

• Wide area of safe operation (ASO)

I Absolute Maximum Ratings T

Unit: mm

Parameter

Symbol

Rating

Unit

Collector to base voltage

1 700

V

Collector to emitter voltage

1 700

V

600

V

Emitter to base voltage

7V

Peak collector current

30

A

Collector current

18

A

Base current

8

A

Collector power

= 25°CP

C

70

W

dissipation

= 25°C

3.5

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

I Electrical Characteristics T

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector cutoff current

= 1 000 V, I

E

= 050

µA

= 1 700 V, I

E

= 01

mA

Emitter cutoff current

µA

Forward current transfer ratio

= 5 V, I

C

= 10 A

6

12

Collector to emitter saturation voltage

= 10 A, I

B

= 2.5 A

3

V

Base to emitter saturation voltage

1.5

V

Transition frequency

= 10 V, I

C

= 0.1 A, f = 0.5 MHz

3

MHz

Storage time

= 10 A, Resistance loaded

3.0

µs

Fall time

0.2

µs

(4.0)

5

°

5

°

5

°

5

°

5

°

1

5

°

23

1: Base

2: Collector

3: Emitter

TOP-3E Package

Internal Connection

B

C

E

Marking Symbol: C5546