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RF1001T2D Datasheet(PDF) 1 Page - Rohm |
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RF1001T2D Datasheet(HTML) 1 Page - Rohm |
1 / 4 page RF1001T2D Diodes Rev.B 1/3 Fast recovery diodes RF1001T2D Applications External dimensions (Unit : mm) Structure General rectification ROHM : TO220FN ① Manufacture Date 1.2 1.3 0.8 (1) (2) (3) 10.0±0.3 0.1 2.8±0.2 0.1 4.5±0.3 0.1 0.7±0.1 0.05 2.6±0.5 ① Features 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25 °C) Sym bol Unit V R 200 RM V VR V Io A IFSM A Tj ℃ Ts tg ℃ Storage tem perature Average rectified forward current (*1) 150 -55 to +150 Forward current s urge peak (60Hz・1cyc) 10 Junction tem perature 80 (*1) Per chip :Io/2 Param eter Revers e voltage (DC) evers e voltage (repetitive peak) Lim its 200 Electrical characteristic (Ta=25 °C) Symbol Min. Typ. Max. Unit Conditions VF - 0.87 0.93 V IF=5A Reverse current IR -0.01 10 µA VR=200V Reverse recovery time trr -15 30 ns IF=0.5A,IR=1A,Irr=0.25*IR Thermal impedance θjc - - 2.5 ℃ /W JUNCTION TO CASE rward voltage Parameter Fo |
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