RB717F

Diodes

Rev.B

1/3

Schottky barrier diode

RB717F

Applications

Low current rectification

Features

1) Small mold type. (UMD3)

3) High reliability.

Construction

Silicon epitaxial planar

External dimensions (Unit : mm)

Land size figure (Unit : mm)

UMD3

0.65

1.3

0.8MIN

Structure

ROHM : UMD3

JEITA : SC-70

JEDEC : SOT-323

dot (year week factory)

2.0±0.2

0.3±0.1

各リードとも

同寸法

(3)

1.3±0.1

（0.65）

（0.65）

(2)

(1)

0.15±0.05

0.9±0.1

0.7±0.1

0～0.1

Each lead has same dimension

Taping specifications (Unit : mm)

4.0±0.1

4.0±0.1

2.0±0.05

φ1.55±0.05

φ0.5±0.05

2.25±0.1

　　　　 0

1.25±0.1

0.3±0.1

Absolute maximum ratings (Ta=25

°C)

Symbol

Unit

V

V

Io

mA

mA

Tj

℃

Tstg

℃

Parameter

Electrical characteristics (Ta=25

°C)

Reevrse voltage (DC)

verage rectifoed forward current

（*1）

everse voltage (repetitive peak)

-40 to +125

Limits

40

30

40

ward current surge peak （60Hz・1cyc）（*1）

200

ion temperature

torage temperature

*1) Rating of per diode

125

A

R

For

Junct

S

(

Symbol

Min.

Typ.

Max.

Unit

--

0.37

V

--

1

µA

Ct

-

2.0

-

pF

Conditions

Capacitance between terminals

everse current

Parameter

ward voltage

R

For