NTHD4102PT1 datasheet(2/6 Pages) ONSEMI

Part #	NTHD4102PT1

Description	Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFET

Download	6 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

2 / 6 page

NTHD4102P

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(Br)DSS

VGS = 0 V, ID = −250 mA

−20

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(Br)DSS/TJ

−15

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V

TJ = 25°C

−1.0

mA

VGS = 0 V

VDS = −16 V

TJ = 85°C

−5.0

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = "8.0 V

"100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = −250 mA

−0.45

−1.5

V

Gate Threshold Temperature Coefficient

VGS(TH)/TJ

2.7

mV/

°C

Drain−to−Source On Resistance

RDS(ON)

VGS = −4.5 V, ID = −2.9 A

64

80

m

W

()

VGS = −2.5 V, ID = −2.2 A

85

110

VDS = −1.8 V, ID = −1.0 A

120

170

Forward Transconductance

gFS

VDS = −10 V, ID = −2.9 A

7.0

S

CHARGES, CAPACITANCES, AND GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

750

pF

Output Capacitance

COSS

VGS = 0 V, f = 1.0 MHz,

VDS = −16 V

100

Reverse Transfer Capacitance

CRSS

DS

45

Total Gate Charge

QG(TOT)

7.6

8.6

nC

Gate−to−Source Charge

QGS

VGS = −4.5 V, VDS = −16 V,

ID = −2.6 A

1.3

Gate−to−Drain Charge

QGD

ID = −2.6 A

2.6

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(ON)

5.5

10

ns

Rise Time

tr

VGS = −4.5 V, VDD = −16 V,

12

25

Turn−Off Delay Time

td(OFF)

VGS

4.5 V, VDD

16 V,

ID = −2.6 A, RG = 2.0 W

32

40

Fall Time

tf

23

35

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = −1.1 A

−0.8

−1.2

V

Reverse Recovery Time

tRR

20

40

ns

Charge Time

ta

VGS = 0 V, dIS/dt = 100 A/ms,

15

Discharge Time

tb

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 1.0 A

5

Reverse Recovery Charge

QRR

0.01

mC

2. Pulse test: pulse width

≤ 300 ms, duty cycle ≤ 2%

3. Switching characteristics are independent of operating junction temperatures

Similar Part No. - NTHD4102PT1

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NTHD4102PT1	64Kb / 6P	Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFET November, 2005 ??Rev. 5
	NTHD4102PT1	105Kb / 5P	Power MOSFET September, 2011 ??Rev. 6
	NTHD4102PT1G	64Kb / 6P	Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFET November, 2005 ??Rev. 5
	NTHD4102PT1G	105Kb / 5P	Power MOSFET September, 2011 ??Rev. 6

More results

Similar Description - NTHD4102PT1

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NTHD4102P	64Kb / 6P	Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFET November, 2005 ??Rev. 5
	NTHD4508N	55Kb / 6P	Power MOSFET 20 V, 4.1 A, Dual N?묬hannel ChipFET October, 2004 ??Rev. 3
	NTHD4401P	75Kb / 6P	Power MOSFET -20 V, -3.0 A, Dual P-Channel, ChipFET November, 2005 ??Rev. 4
	NTHD5903T1	68Kb / 6P	Power MOSFET -20 V, -3.0 A, Dual P-Channel ChipFET November, 2005 ??Rev. 4
	NTHS4101P	59Kb / 6P	Power MOSFET -20 V, 6.7 A, P-Channel ChipFET February, 2007 ??Rev. 3
	NTHS4101P	63Kb / 6P	Power MOSFET -20 V, 6.7 A, P-Channel ChipFET-TM October, 2004 ??Rev. 1
NXP Semiconductors	PMN48XP	528Kb / 15P	20 V, 4.1 A P-channel Trench MOSFET Rev. 1-21 April 2011
Nexperia B.V. All right...	PMN48XP	1Mb / 15P	20 V, 4.1 A P-channel Trench MOSFET
ON Semiconductor	NTHD5903T1-D	69Kb / 8P	Power MOSFET Dual P-Channel ChipFET March, 2002 ??Rev. 2
ON Semiconductor	NTHD4401P	66Kb / 8P	Power MOSFET ??0 V, ??.0 A, Dual P?묬hannel, ChipFET October, 2004 ??Rev. 3

More results

NTHD4102PT1 Datasheet(PDF) 2 Page - ON Semiconductor

NTHD4102PT1 Datasheet(HTML) 2 Page - ON Semiconductor

Similar Part No. - NTHD4102PT1

Similar Description - NTHD4102PT1

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL