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RB095T-60 Datasheet(PDF) 1 Page - Rohm |
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RB095T-60 Datasheet(HTML) 1 Page - Rohm |
1 / 4 page RB095T-60 Diodes Rev.B 1/3 Schottky barrier diode RB095T-60 Symbol Unit VRM V V R 60 R V Io A IFSM A Tj ℃ Tstg ℃ Storage temperature -40 to +150 (*1)Tc=100℃max per chip : Io/2 Forward current surge peak (60Hz・1cyc) 100 Average rectified forward current (*1) 150 everse voltage (DC) Average rectified forward current (*1) 6 Parameter Limits Reverse voltage (repetitive) 60 Applications External dimensions (Unit : mm) Structure Switching power supply ROHM : TO220FN ① Manufacture Date 1.2 1.3 0.8 (1) (2) (3) 10.0±0.3 0.1 2.8±0.2 0.1 4.5±0.3 0.1 0.7±0.1 0.05 2.6±0.5 ① Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25 °C) Electrical characteristic (Ta=25 °C) For R Symbol Min. Typ. Max. Unit ward voltage VF - - 0.58 V IF=3A everse current IR - - 300 µA VR=60V Thermal impedance θjc - - 3.0 ℃ /W junction to case Conditions Parameter |
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