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BM63375S-VA Datasheet(PDF) 15 Page - Rohm

Part No. BM63375S-VA
Description  600V IGBT Intelligent Power Module (IPM)
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Maker  ROHM [Rohm]
Homepage  http://www.rohm.com
Logo ROHM - Rohm

BM63375S-VA Datasheet(HTML) 15 Page - Rohm

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BM63375S-VA
BM63375S-VC
TSQ50501-BM63375S-2
© 2020 ROHM Co., Ltd. All rights reserved.
30.Jul.2020 Rev.001
www.rohm.com
TSZ22111・15・001
11) Three-shunt Resistors Drive
・It is not recommended to input the voltage of each shunt resistor directly to the CIN pin when IPM is operated with three
shunt resistor. In that case, it is necessary to use the external protection circuit as below.
・It is necessary to set the time constant Ruff(1.0µs is recommended) of external comparator input so that IGBT stops within
2µs when short circuit occurs. Please confirm operation on the actual application since SCP shutdown time changes
depending on the PCB wiring pattern.
・It is recommended for the threshold voltage VREF to be set to the same rating of short circuit trip level(VSC=0.48V(Typ))
・To prevent malfunction, the wiring of A, B, C should be as short as possible.
・OR output high level when protection works should be 0.505V(maximum VSC rating) to 7V(CIN absolute maximum rating).
Figure 18. Wiring Pattern around the Shunt Resistor when operating with Three-shunt Resistors
IPM
GND
NU
NV
NW
N
Wiring inductance should be less than 10nH.
(Inductance of a copper pattern with length=17mm, width=3mm is about 10nH.)
Wiring from GND pin should be connected close
to the pin of shunt resistor.
CIN
VREF
5V
Wiring from shunt resistor to
RC filter should be connected
closet to the pin of shunt
resistor.
External protection circuit
+
-
+
-
+
-
Comparator
(Open collector type)
B
A
C
OR output
Rf
Cf


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