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TSP12N65M Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd

Part No. TSP12N65M
Description  N-Channel 650 V (D-S) MOSFET
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Maker  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

TSP12N65M Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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FEATURES
• Reduced trr, Qrr, and IRRM
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Low switching losses due to reduced Qrr
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5.1 A.
c. 1.6 mm from case.
d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
PRODUCT SUMMARY
VDS (V) at TJ max.
650
RDS(on) max. () at 25 °C
VGS = 10 V
0.3
Qg max. (nC)
106
Qgs (nC)
14
Qgd (nC)
33
Configuration
Single
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
650
V
Gate-Source Voltage
VGS
± 30
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
TC = 25 °C
ID
1
A
TC = 100 °C
16
Pulsed Drain Current a
IDM
53
Linear Derating Factor
1.7
W/°C
Single Pulse Avalanche Energy b
EAS
367
mJ
Maximum Power Dissipation
PD
208
W
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to +150
°C
Drain-Source Voltage Slope
TJ = 125 °C
dV/dt
37
V/ns
Reverse Diode dV/dt d
31
Soldering Recommendations (Peak Temperature) c
for 10 s
300
°C
N-Channel
650 V (D-S) MOSFET
8
TO-220AB
GD S
4
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
TSP12N65M
1


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