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SPP4925B Datasheet(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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SPP4925B Datasheet(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
1 / 4 page www.doingter.cn — 1 — Description: This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features: 1) VDS=-30V,ID=-7A,RDS(ON)<20mΩ@VGS=-10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings:(T C=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ -7 A Continuous Drain Current-TC=100℃ -5.1 Pulsed Drain Current 1 -32 EAS Single Pulse Avalanche Energy --- mJ PD Power Dissipation(TC=25℃) 2.1 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics: Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case --- ℃/W RƟJA Thermal Resistance,Junction to Ambient 60 G D D D D S1 S S Dual SPP4925B |
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