SI5449DC datasheet(3/4 Pages) VISHAY

Part #	SI5449DC

Description	P-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si5449DC

Vishay Siliconix

Document Number: 71327

S-21251—Rev. B, 05-Aug-02

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0

300

600

900

1200

0

6

12

18

24

30

0.6

0.8

1.0

1.2

1.4

1.6

--50

--25

0

25

50

75

100

125

150

0

1

2

3

4

5

02

46

8

0.00

0.04

0.08

0.12

0.16

0.20

0369

12

15

VDS -- Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VDS =15 V

ID =3.1 A

ID -- Drain Current (A)

VGS =4.5 V

ID =3.1 A

VGS =2.5 V

Gate Charge

On-Resistance vs. Drain Current

Qg -- Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ -- Junction Temperature (_C)

0.00

0.05

0.10

0.15

0.20

012345

TJ = 150_C

ID =3.1 A

20

10

1

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD -- Source-to-Drain Voltage (V)

VGS -- Gate-to-Source Voltage (V)

VGS =4.5 V

TJ =25_C

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