LDTA114EET1G datasheet(5/12 Pages) LEIDITECH | Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

Part #	LDTA114EET1G

Description	Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

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Manufacturer	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

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TYPICAL ELECTRICAL CHARACTERISTICS − LDTA114EET1G

Figure 3. VCE(sat) versus IC

100

10

1

0.1

0.01

0.001

0

Vin, INPUT VOLTAGE (VOLTS)

TA =−25°C

25°C

1

2

3

4

5

6

7

8

9

10

Figure 4. DC Current Gain

Figure 5. Output Capacitance

Figure 6. Output Current versus Input Voltage

Figure 7. Input Voltage versus Output Current

0.01

20

IC, COLLECTOR CURRENT (mA)

0.1

1

0

40

50

1000

1

10

100

IC, COLLECTOR CURRENT (mA)

TA =75°C

−25°C

100

10

0

IC, COLLECTOR CURRENT (mA)

0.1

1

10

100

10

20

30

40

50

TA =−25°C

25°C

75°C

IC/IB = 10

50

010

20

30

40

4

3

1

2

VR, REVERSE BIAS VOLTAGE (VOLTS)

0

TA =−25°C

25°C

75°C

25°C

VCE = 10 V

f = 1 MHz

lE = 0 V

TA = 25°C

VO = 5 V

VO = 0.2 V

LDTA114EET1G Series

Rev :

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LDTA114EET1G Datasheet(PDF) 5 Page - Shanghai Leiditech Electronic Technology Co., Ltd

LDTA114EET1G Datasheet(HTML) 5 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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