QSZ4

Transistors

4/4

Tr2(NPN)

Fig.8 DC current gain

vs. collector current

10

100

1000

0.001

0.01

0.1

1

10

VCE=

−2V

Pulsed

Ta=125 C

Ta=25 C

Ta=

−25 C

Fig.9 Collector-emitter saturation voltage

base-emitter saturation voltage

vs. collector current

0.01

0.1

1

10

0.001

0.01

0.1

1

10

COLLECTOR CURRENT : IC (A)

IC/IB=20/1

Pulsed

Ta=125 C

Ta=25 C

Ta=

−25 C

0.1

1

10

0.001

0.01

0.1

1

10

COLLECTOR CURRENT : IC (A)

IC/IB=20/1

Pulsed

Ta=125 C

Ta=25 C

Ta=

−25 C

Fig.10 Base-emitter saturation voltage

vs. collector current

Fig.11 Grounded emitter propagation

characteristics

0.001

0.01

0.1

1

10

0

1.4

0.2

0.4

0.6

0.8

1

1.2

VCE=

−2V

Pulsed

Ta=125 C

Ta=25 C

Ta=

−25 C

Fig.12 Gain bandwidth product

vs. emitter current

10

100

1000

0.01

0.1

1

10

Ta=25 C

VCE=

−2V

f= 100MHz

Fig.13 Collector output chapacitance

vs. collector-base voltage

Emitter input capacitance

vs. emitter-base voltage

10

100

1000

0.001

0.01

0.1

1

10

100

IC=0A

f=1MHz

Ta=25 C

Cob

Cib