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DSEP60-12AR Datasheet(PDF) 1 Page - IXYS Corporation

Part No. DSEP60-12AR
Description  HiPerFRED Epitaxial Diode with soft recovery
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

DSEP60-12AR Datasheet(HTML) 1 Page - IXYS Corporation

  DSEP60-12AR Datasheet HTML 1Page - IXYS Corporation  
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© 2003 IXYS All rights reserved
1 - 1
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
IXYS reserves the right to change limits, test conditions and dimensions.
I
FAV
= 60 A
V
RRM = 1200 V
t
rr
= 40 ns
DSEP 60-12AR
V
RSM
V
RRM
Type
V
V
1200
1200
DSEP 60-12AR
HiPerFREDTM Epitaxial Diode
with soft recovery
Features
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low I
RM-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low EMI/RFI
• Low I
RM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see Outlines.pdf
Advanced Technical Information
A = Anode, C = Cathode
ISOPLUS 247TM
C
A
TAB
C
A
Symbol
Conditions
Maximum Ratings
I
FRMS
70
A
I
FAVM
T
C = 90°C; rectangular, d = 0.5
60
A
I
FSM
T
VJ = 45°C; tp = 10 ms (50 Hz), sine
500
A
E
AS
T
VJ = 25°C; non-repetitive
23
mJ
I
AS = 14.5 A; L = 180 µH
I
AR
V
A = 1.5·VR typ.; f = 10 kHz; repetitive
1.5
A
T
VJ
-55...+175
°C
T
VJM
175
°C
T
stg
-55...+150
°C
P
tot
T
C = 25°C
190
W
M
f
mounting force
20...120
N
Weight
typical
6
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
V
R
= V
RRM;TVJ =
25°C
650
µA
V
R
= V
RRM;TVJ = 150°C
2.5
mA
V
F
I
F = 60 A;
T
VJ = 150°C
1.74
V
T
VJ =
25°C
2.66
V
R
thJC
0.8
K/W
R
thCH
0.25
K/W
t
rr
I
F = 1 A; -di/dt = 300 A/µs;
40
ns
V
R = 30 V; TVJ = 25°C
I
RM
V
R = 100 V;
I
F = 130 A;
7
14.3
A
-di
F/dt = 100 A/µs; TVJ = 100°C
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.


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