EMT18 / UMT18N / IMT18

Transistors

Rev.A

1/3

General purpose transistors

(dual transistors)

EMT18 / UMT18N / IMT18

Features

1) Two 2SA2018 chips in a EMT package.

2) Mounting possible with EMT3 or UMT3 or SMT3

automatic mounting machines.

3) Transistor elements are independent, eliminating

interference.

Structure

Epitaxial planar type

NPN silicon transistor

Equivalent circuit

(3)

(4)

(2)

(5)

(1)

(6)

EMT18 / UMT18N

(4)

(3)

(5)

(2)

(6)

(1)

IMT18

External dimensions (Unit : mm)

Each lead has same dimensions

EMT18

ROHM : SMT6

EIAJ : SC-74

JEDEC : SOT-457

Each lead has same dimensions

IMT18

ROHM : UMT6

EIAJ : SC-88

Each lead has same dimensions

UMT18N

0.1Min.

2.1

1.25

0.3Min.

2.8

1.6

1.2

1.6

(1)

(2)

(5)

(3)

(6)

(4)

Absolute maximum ratings (Ta=25

°C)

Collector-base voltage

Collector-emitter voltage

Power dissipation

Storage temperature

Emitter-base voltage

Collector current

Junction temperature

∗2 120mW per element must not be exceeded.

∗3 200mW per element must not be exceeded.

Parameter

Symbol

Tstg

Limits

−15

−12

150 (TOTAL)

−55 to +150

Unit

V

V

mW

°C

°C

−6

−500

∗1

∗3

∗2

V

mA

1.0

A

Tj

150

SMT6 300 (TOTAL)

EMT6

UMT6