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EMF7 Datasheet(PDF) 2 Page - Rohm

Part No. EMF7
Description  Power management (dual transistors)
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

EMF7 Datasheet(HTML) 2 Page - Rohm

  EMF7 Datasheet HTML 1Page - Rohm EMF7 Datasheet HTML 2Page - Rohm EMF7 Datasheet HTML 3Page - Rohm EMF7 Datasheet HTML 4Page - Rohm EMF7 Datasheet HTML 5Page - Rohm  
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EMF7
Transistors
2/4
!
!
!
!
Absolute maximum ratings (Ta=25
°C)
Tr1
Parameter
∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
15
12
6
500
150(TOTAL)
150
−55~+150
1.0
∗1
∗2
Unit
V
V
V
mA
A
mW
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
DTr2
Parameter
∗1 Characteristics of built-in transistor.
∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Symbol
VCC
VIN
IC
IO
PC
Tj
Tstg
Limits
50
−10~+20
100
100
150(TOTAL)
150
−55~+150
∗1
∗2
Unit
V
V
mA
mA
mW
°C
°C
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
!
!
!
!
Electrical characteristics (Ta=25
°C)
Tr1
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
VCB
=10V, IE=0mA, f=1MHz
Transition frequency
fT
320
MHz
VCE
=2V, IE=−10mA, f=100MHz
BVCEO
12
−−
V
IC
=1mA
Collector-emitter breakdown voltage
BVCBO
15
−−
V
IC
=10µA
Collector-base breakdown voltage
BVEBO
6
−−
V
IE
=10µA
Emitter-base breakdown voltage
ICBO
−−
100
nA
VCB
=15V
Collector cut-off current
IEBO
−−
100
nA
VEB
=6V
Emitter cut-off current
VCE(sat)
90
250
mV
IC
=200mA, IB=10mA
Collector-emitter saturation voltage
hFE
270
680
VCE
=2V, IC=10mA
DC current gain
Cob
7.5
pF
Collector output capacitance
DTr2
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Transition frequency
fT
250
1.54
2.86
MHz
VCE
=10V, IE=−5mA, f=100MHz
∗ Characteristics of built-in transistor.
VI(off)
−−
0.5
V
VCC
=5V, IO=100µA
Input voltage
VI(on)
3.0
−−
V
VO
=0.3V, IO=20mA
VO(on)
100
300
mV
VO
=10mA, II=0.5mA
Output voltage
II
−−
3.8
mA
VI
=5V
Input current
IO(off)
−−
0.5
µAVCC=50V, VI=0V
Output current
R1
2.2
k
Ω−
Input resistance
GI
20
−−
VO
=5V, IO=20mA
DC current gain
R2/R1
0.8
1.0
1.2
Resistance ratio


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