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2SC5053 Datasheet(PDF) 1 Page - Rohm

Part No. 2SC5053
Description  Medium power transistor (50V, 1A)
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Maker  ROHM [Rohm]
Homepage  http://www.rohm.com
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2SC5053 Datasheet(HTML) 1 Page - Rohm

   
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2SC5053
Transistors
Rev.A
1/2
Medium power transistor (50V, 1A)
2SC5053
Features
1) Low saturation voltage, typically VCE(sat)=0.12V at IC/
IB=500mA/50mA
2) PC=2W (on 40×40×0.7mm ceramic board)
3) Complements the 2SA1900
External dimensions (Unit : mm)
MPT3
(1)Base
(2)Collector
(3)Emitter
1.5
0.4
1.6
0.5
3.0
0.4
0.4
1.5
1.5
(3)
(2)
(1)
4.5
Absolute maximum ratings (Ta=25
°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter- base voltage
Collector power dissipation
Collector current
Collector power dissipation
Storage temperature
Symbol
Limits
−60
−50
−5
−1
0.5
2
150
−55 to +150
Unit
V
V
V
A
−2
A (Pulse)
W
W
∗1
∗2
°C
°C
∗1 Single pulse Pw=100ms, Duty=1/2
∗2 When mounted on a 40 40 0.7mm seramic board.
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
External dimensions (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Cob
−60
−50
−5
120
150
20
−0.1
−0.5
−0.4
270
V
V
V
µA
µA
V
MHz
pF
IC=
−50µA
IC=
−1mA
IE=
−50µA
VCB=
−40V
VEB=
−4V
IC/IB=
−500mA/−50mA
VCE/IC=
−3V/−0.5A
VCE=
−5V , IE=50mA , f=100MHz
VCB=
−10V , IE=0A , f=1MHz
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
fT
VCE(sat)
Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pleces)
2SC5053
MPT3
QR
T100
Marking
CG
1000
∗ Denotes hFE


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