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TC55VZM216A Datasheet(PDF) 5 Page - Toshiba Semiconductor

Part No. TC55VZM216A
Description  262,144-WORD BY 16-BIT CMOS STATIC RAM
Download  11 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TC55VZM216A Datasheet(HTML) 5 Page - Toshiba Semiconductor

 
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TC55VZM216AJJN/AFTN08,10,12
2003-01-17
5/11
AC CHARACTERISTICS (Ta
==== 0° to 70°C
(See Note 1)
, VDD
==== 3.3 V ±±±± 0.3 V)
READ CYCLE
TC55VZM216AJJN/AFTN
08
10
12
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
tRC
Read Cycle Time
8
10
12
tACC
Address Access Time
8
10
12
tCO
Chip Enable Access Time
8
10
12
tOE
Output Enable Access Time
4
5
6
tBA
Upper Byte, Lower Byte Access Time
4
5
6
tOH
Output Data Hold Time from Address Change
3
3
3
tCOE
Output Enable Time from Chip Enable
3
3
3
tOEE
Output Enable Time from Output Enable
0
0
0
tBE
Output Enable Time from Upper Byte, Lower Byte
0
0
0
tCOD
Output Disable Time from Chip Enable
4
5
6
tODO
Output Disable Time from Output Enable
4
5
6
tBD
Output Disable Time from Upper Byte, Lower Byte
4
5
6
ns
WRITE CYCLE
TC55VZM216AJJN/AFTN
08
10
12
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
tWC
Write Cycle Time
8
10
12
tWP
Write Pulse Width
6
7
8
tCW
Chip Enable to End of Write
6
7
8
tBW
Upper Byte, Lower Byte Enable to End of Write
6
7
8
tAW
Address Valid to End of Write
6
7
8
tAS
Address Setup Time
0
0
0
tWR
Write Recovery Time
0
0
0
tDS
Data Setup Time
4
5
6
tDH
Data Hold Time
0
0
0
tOEW
Output Enable Time from Write Enable
3
3
3
tODW
Output Disable Time from Write Enable
4
5
6
ns
AC TEST CONDITIONS
Fig.1
PARAMETER
TEST CONDITION
Input Pulse Level
3.0 V/ 0.0 V
Input Pulse Rise and Fall Time
2 ns
Input Timing Measurement
Reference Level
1.5 V
Output Timing Measurement
Reference Level
1.5 V
Output Load
Fig.1
I/O pin
CL = 30 pF
Z0 = 50 Ω
RL = 50 Ω
VL = 1.5 V
I/O pin
CL = 5 pF
870
(For tCOE, tOEE, tBE, tCOD,
tBD, tODO, tOEW and tODW)
3.3 V
1200


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