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FTK6N70P Datasheet(PDF) 3 Page - First Silicon Co., Ltd |
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FTK6N70P Datasheet(HTML) 3 Page - First Silicon Co., Ltd |
3 / 7 page 2013. 01. 03 3/7 Revision No : 0 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) VSD VGS = 0 V, IS = 6.0 A 1.4 V IS 6.0 A ISM 24.0 A tRR 531 ns QRR VGS = 0 V, IS = 1.0A, dIF/dt =100 A/µs (Note 4) 3.3 µC Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 300mH, IAS = 5.0A, VDD = 140V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 1.0A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 5. Essentially independent of operating temperature PARAMETER SYMBOL TEST CONDITIONS MIN TYP UNIT DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Reverse Recovery Time Reverse Recovery Charge MAX FTK6N70P/F/D/I |
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