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FTK5N60P Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part No. FTK5N60P
Description  5 Amps, 600 Volt N-CHANNEL POWER MOSFET
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Maker  FS [First Silicon Co., Ltd]
Homepage  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK5N60P Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25˚C, unless otherwise specified)
PARAMET
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
600
V
VDSS
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
4.8
A
TC = 25°C
4.8
A
Continuous Drain Current
TC = 100°C
ID
2.4
Pulsed Drain Current (Note 1)
IDM
18
A
Single Pulse(Note 2)
EAS
210
mJ
Avalanche Energy
Repetitive Limited by TJ(MAX)
EAR
10.0
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
W
PD
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC=25˚C , unless Otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
UNIT
OFF CHARACTERISTICS
600
V
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
1
µ
A
Drain-Source Leakage Current
IDSS
VDS = 480V, TC = 125°C
10
µ
A
Forward
VGS = 30V, VDS = 0V
100
nA
Gate-Source Leakage Current
Reverse
IGSS
VGS = -30V, VDS = 0V
-100
nA
Breakdown Voltage Temperature Coefficient ΔBVDSS / ΔTJ ID = 250
µ
A, Referenced to
25°C
0.7
V / ˚C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250µA
2.0
4.0
V
Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 2.25A
2.4
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
520
pF
Output Capacitance
COSS
35
pF
Reverse Transfer Capacitance
CRSS
VDS = 25V, VGS = 0V,
f = 1.0MHz
7.5
pF
2015. 03. 30
2/7
Revision No : 0
TSTG
-55 ~ +150
˚C
MAX
Storage Temperature
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD = 300V, ID = 4A, RG = 25Ω
(Note 4,5)
ns
Turn-On Rise Time
tR
42
ns
Turn-Off Fall Time
tF
46
ns
Total Gate Charge
QG
15
nC
Gate-Source Charge
QGS
VDS = 480V,ID = 4A, VGS = 10V
(Note 4,5)
2.8
nC
Turn-Off Delay Time
Gate-Drain Charge
QGD
5.5
nC
tD(OFF)
Forward Transconductance
gFS
VDS = 50V, ID = 2.5A (Note 4)
1.9
S
10
38
ns
Junction Temperature
TJ
+150
˚C
TOPR
-55 ~ +150
˚C
Operating Temperature
FTK5N60P/F/D/I
Total Power Dissipation
(TO-251/252/TO-220F/220)
Tc=25℃
45/45/31/62.5
W
Derate above 25°C
0.36/0.36/0.25/0.5


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