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SM2205PSQG Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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SM2205PSQG Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
1 / 9 page P-Channel 20 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • Thermally Enhanced DFN2X2 Package - Small Footprint Area - Low On-Resistance APPLICATIONS • Load Switch, PA Switch, and Battery Switch for Portable Devices Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile The DFN2X2 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) - 20 0.0 30 at V GS = - 4.5 V -10a 18 nC 0.0 40 at V GS = - 2.5 V -9a S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 1 0a A TC = 70 °C - 8a TA = 25 °C - 10b, c TA = 70 °C - 8b, c Pulsed Drain Current (t = 300 µs) IDM - 30 Continuous Source-Drain Diode Current TC = 25 °C IS - 1 0a TA = 25 °C - 2. 5b, c Maximum Power Dissipation TC = 25 °C PD 1 7 W TC = 70 °C 1 1 TA = 25 °C 3. 3b, c TA = 70 °C 2. 1b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 250 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t 5 s RthJA 28 3 8 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 5. 6 7.5 DFN 2x2 Top View Bottom View Pin 1 D D G D D S D S Pin 1 E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SM2205PSQG 1 |
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