NVH4L040N65S3F datasheet(1/9 Pages) ONSEMI

Part #	NVH4L040N65S3F

Description	MOSFET ??Single N-Channel, SUPERFET III, FRFET

Download	9 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

1 / 9 page

August, 2020 − Rev. 0

1

Publication Order Number:

NVH4L040N65S3F/D

MOSFET – Single N-Channel,

SUPERFET) III, FRFET)

650 V, 65 A, 40 mW

NVH4L040N65S3F

Features

• Ultra Low Gate Charge & Low Effective Output Capacitance

• Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS)

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

650

V

Gate−to−Source Voltage

− DC

VGSS

±30

V

Gate−to−Source Voltage

− AC (f > 1 Hz)

VGSS

±30

V

Drain Current

− Continuous (TC = 25°C)

ID

65

A

Drain Current

− Continuous (TC = 100°C)

ID

45

A

Drain Current

− Pulsed (Note 3)

IDM

162.5

A

Power Dissipation

(TC = 25°C)

PD

446

W

Power Dissipation

− Derate Above 25°C

PD

3.57

W/°C

Operating Junction and Storage Temperature

Range

TJ, TSTG −55 to

+150

°C

Single Pulsed Avalanche Energy (Note 4)

EAS

1009

mJ

Repetitive Avalanche Energy (Note 3)

EAR

4.46

mJ

MOSFET dv/dt

dv/dt

100

V/ns

Peak Diode Recovery dv/dt (Note 5)

dv/dt

50

V/ns

Max. Lead Temperature for Soldering Purposes

(1/8″ from case for 5 s)

TL

300

°C

THERMAL CHARACTERISTICS

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction−to−Case,

Max.

(Notes 1, 2)

RqJC

0.28

°C/W

Thermal Resistance, Junction−to−Ambient,

Max.

(Notes 1, 2)

RqJA

40

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. The entire application environment impacts the thermal resistance values shown.

They are not constants and are only valid for the particular conditions noted.

2. Assembled to an infinite heatsink with perfect heat transfer from the case

(assumes 0 K/W thermal interface).

3. Repetitive rating: pulse−width limited by maximum junction temperature.

4. IAS = 9 A, RG = 25 W, starting TJ = 25°C.

5. ISD ≤ 32.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.

TO−247−4LD

CASE 340CJ

www.onsemi.com

$Y

= ON Semiconductor Logo

&Z

= Assembly Plant Code

&3

= Data Code (Year & Week)

&K

= Lot

NVH4L040N65S3F = Specific Device Code

MARKING

DIAGRAM

VDSS

RDS(ON) MAX

ID MAX

650 V

40 mW @ 10 V

65 A

D

G

S2

S1

$Y&Z&3&K

NVH4L040

N65S3F

POWER MOSFET

D

S2

G

S1

S1: Driver Source

S2: Power Source

Device

Package

Shipping

ORDERING INFORMATION

NVH4L040N65S3F TO−247−4LD

(Pb−Free)

30 Units / Tube

Similar Part No. - NVH4L040N65S3F

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NVH4L040N120M3S	357Kb / 8P	Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L January, 2023 - Rev. 3
	NVH4L040N120M3S	359Kb / 8P	Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L February, 2023 - Rev. 4
	NVH4L040N120M3S	359Kb / 8P	Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L February, 2023 - Rev. 4
	NVH4L040N120SC1	282Kb / 8P	MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 40 m, 58 A April, 2020 ??Rev. 1
	NVH4L040N120SC1	363Kb / 8P	Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-4L May, 2022 - Rev. 3

More results

NVH4L040N65S3F Datasheet(PDF) 1 Page - ON Semiconductor

NVH4L040N65S3F Datasheet(HTML) 1 Page - ON Semiconductor

Similar Part No. - NVH4L040N65S3F

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL