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SUD40N08-16-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SUD40N08-16-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page SUD40N08-16 Vishay Siliconix www.vishay.com 2 Document Number: 71323 S-40272—Rev. C, 23-Feb-04 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typa Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 80 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 2.0 4.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA VDS = 80 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V, TJ = 125_C 50 mA g DSS VDS = 80 V, VGS = 0 V, TJ = 175_C 250 m On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 60 A VGS = 10 V, ID = 40 A 0.013 0.016 Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 40 A, TJ = 125_C 0.027 W DS(on) VGS = 10 V, ID = 40 A, TJ = 175_C 0.037 Forward Transconductanceb gfs VDS = 15 V, ID = 40 A 45 S Dynamica Input Capacitance Ciss 1960 Output Capacitance Coss VGS = 0 V, VDS = 25 V, F = 1 MHz 370 pF Reverse Transfer Capacitance Crss 200 Total Gate Chargec Qg 42 60 Gate-Source Chargec Qgs VDS = 40 V, VGS = 10 V, ID = 40 A 7 nC Gate-Drain Chargec Qgd DS , GS , D 13 Gate Resistance Rg 0.5 2.7 W Turn-On Delay Timec td(on) 12 20 Rise Timec tr VDD = 40 V, RL = 1.0 W 52 80 ns Turn-Off Delay Timec td(off) VDD = 40 V, RL = 1.0 W ID ^ 40 A, VGEN = 10 V, Rg = 2.5 W 25 38 ns Fall Timec tf 10 15 Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM 60 A Diode Forward Voltageb VSD IF = 40 A, VGS = 0 V 1.0 1.5 V Source-Drain Reverse Recovery Time trr IF = 40 A, di/dt = 100 A/ms 45 70 ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. |
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