K5D5657DCM-F015 datasheet(63/74 Pages) SAMSUNG

Part #	K5D5657DCM-F015

Description	MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM

Download	74 Pages

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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63 / 74 page

K5D5657DCM-F015

Revision 0.0

June 2003

- 63 -

MCP MEMORY

Preliminary

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CKE

CS

RAS

CAS

BA1

A10/AP

CL=3

ADDR

WE

: Don’t care

CLOCK

Read & Write Cycle at Different Bank @Burst Length=4

HIGH

RAa

CL=2

Row Active

Read

Write

Read

*NOTE:

1. tCDL should be met to complete write.

BA0

DQM

DQ

(A-Bank)

(D-Bank)

(B-Bank)

Precharge

(A-Bank)

{

CAa

RDb

RBc

CBc

RDb

tCDL

*Note 1

Row Active

(D-Bank)

Row Active

(B-Bank)

QAa1

QAa0

QAa2 QAa3

QBc0 QBc1 QBc2

DDb0 DDb1 DDb2 DDb3

QAa1

QAa0

QAa2 QAa3

QBc0 QBc1

CDb

RBc

DDb0 DDb1 DDb2 DDb3

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K5D5657DCM-F015 Datasheet(PDF) 63 Page - Samsung semiconductor

K5D5657DCM-F015 Datasheet(HTML) 63 Page - Samsung semiconductor

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Similar Description - K5D5657DCM-F015

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