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2SC3507 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part # 2SC3507
Description  Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SC3507 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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1
Power Transistors
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
1000
1000
800
7
10
5
3
80
3
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
TC=25°C
Ta=25
°C
2SC3507
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q
High-speed switching
q
High collector to base voltage VCBO
q
Satisfactory linearity of foward current transfer ratio hFE
q
Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (T
C=25˚C)
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO(sus)
*
hFE
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 1000V, IE = 0
VEB = 7V, IC = 0
IC = 0.5A, L = 50mH
VCE = 5V, IC = 3A
IC = 3A, IB = 0.6A
IC = 3A, IB = 0.6A
VCE = 5V, IC = 0.5A, f = 1MHz
IC = 3A, IB1 = 0.6A, IB2 = –1.2A,
VCC = 250V
min
800
6
typ
6
max
50
50
1.5
1.5
1
2.5
0.5
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
*V
CEO(sus) Test circuit
X
L 50mH
15V
1
Y
G
6V
120
50/60Hz
mercury relay
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
15.0
±0.3
5.0
±0.2
11.0
±0.2
10.9
±0.5
5.45
±0.3
3
2
1
1.1
±0.1
2.0
±0.2
0.6
±0.2
2.0
±0.1
φ3.2±0.1
3.2


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