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SI9410DY-T1-E3 Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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SI9410DY-T1-E3 Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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1 / 9 page  N-Channel 20V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) 20 0.0 12 at VGS = 10 V 1 2 6. 1 nC 0.01 5 at VGS = 4.5 V 1 1 SO-8 SD SD SD GD 5 6 7 8 Top View 2 3 4 1 N-Channel MOSFET G D S Notes: a. Base on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 16 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 1 2 A TC = 70 °C 1 1 TA = 25 °C 1 0b, c TA = 70 °C 8b, c Pulsed Drain Current IDM 47 Continuous Source-Drain Diode Current TC = 25 °C IS 3. 7 TA = 25 °C 2. 0b, c Single Pulse Avalanche Current L = 0.1 mH IAS 2 0 Avalanche Energy EAS 2 1 mJ Maximum Power Dissipation TC = 25 °C PD 4. 1 W TC = 70 °C 2. 5 TA = 25 °C 2. 2b, c TA = 70 °C 1. 3b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 3 9 5 5 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 2 5 2 9 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SI9410DY-T1-E3 1 |
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