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PDMB100B12C2 Datasheet(PDF) 3 Page - Nihon Inter Electronics Corporation

Part # PDMB100B12C2
Description  IGBT MODULE Dual 100A 1200V
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Manufacturer  NIEC [Nihon Inter Electronics Corporation]
Direct Link  http://www.niec.co.jp
Logo NIEC - Nihon Inter Electronics Corporation

PDMB100B12C2 Datasheet(HTML) 3 Page - Nihon Inter Electronics Corporation

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IGBT MODULE Dual 100A 1200V
MODULE Dual 100A 1200V
MODULE Dual 100A 1200V
MODULE Dual 100A 1200V
PDMB100B12C2
PDMB100B12C2
PDMB100B12C2
PDMB100B12C2
0123
4
0
50
100
150
200
Forward Voltage VF (V)
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
TC=25℃
TC=125℃
0
100
200
300
400
500
600
1
2
5
10
20
50
100
200
500
-di/dt (A/μs)
Fig.9- Reverse Recovery Characteristics (Typical)
IRrM
trr
IF=100A
TC=25℃
5
10
20
50
100
200
0.05
0.1
0.2
0.5
1
2
5
10
Series Gate Impedance RG (Ω)
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
VCC=600V
IC=100A
VGE=±15V
TC=25℃
tf
tr
ton
toff
10 -5
10 -4
10 -3
10 -2
10 -1
110 1
2x10 -3
5x10 -3
1x10 -2
2x10 -2
5x10 -2
1x10 -1
2x10 -1
5x10 -1
1
Time t (s)
Fig.11- Transient Thermal Impedance
TC=25℃
1 Shot Pulse
FRD
IGBT
0
400
800
1200
1600
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
Collector to Emitter Voltage V CE (V)
Fig.10- Reverse Bias Safe Operating Area
RG=10Ω
VGE=±15V
TC≦125℃


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