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IXTP1R6N50P Datasheet(PDF) 2 Page - IXYS Corporation |
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IXTP1R6N50P Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 4 page IXYS reserves the right to change limits, test conditions, and dimensions. IXTP 1R6N50P IXTY 1R6N50P IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) Min. Typ. Max. g fs V DS= 20 V; ID = 0.5 ID25, pulse test 0.7 1.4 S C iss 140 pF C oss V GS = 0 V, VDS = 25 V, f = 1 MHz 20 pF C rss 2.6 pF t d(on) 10 n s t r V GS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25 16 ns t d(off) R G = 20 Ω (External) 25 n s t f 16 ns Q g(on) 3.9 nC Q gs V GS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 1.4 nC Q gd 1.3 nC R thJC 2.9 K/W Source-Drain Diode Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions Min. typ. Max. I S V GS = 0 V 1.6 A I SM Repetitive 2.5 A V SD I F = IS, VGS = 0 V, 1.5 V Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr I F = 1.6 A, -di/dt = 100 A/µs 400 n s V R = 100V TO-252 AA Outline Dim. Millimeter Inches Min. Max. Min. Max. A 2.19 2.38 0.086 0.094 A1 0.89 1.14 0.035 0.045 A2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.32 5.21 0.170 0.205 E 6.35 6.73 0.250 0.265 E1 4.32 5.21 0.170 0.205 e 2.28BSC 0.090BSC e1 4.57BSC 0.180BSC H 9.40 10.42 0.370 0.410 L 0.51 1.02 0.020 0.040 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 2.54 2.92 0.100 0.115 TO-220 Outline Pins: 1 - Gate 2 - Drain |
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