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HL7852G Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part No. HL7852G
Description  GaA1As Laser Diode
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

HL7852G Datasheet(HTML) 2 Page - Hitachi Semiconductor

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HL7852G
178
Absolute Maximum Ratings (T
C = 25°C)
Item
Symbol
Rated Value
Unit
Optical output power
P
O
50
mW
Pulsed optical output power
P
O (pulse)
60*
1
mW
LD reverse voltage
V
R (LD)
2
V
PD reverse voltage
V
R (PD)
30
V
Operating temperature
Topr
–10 to +60
°C
Storage temperature
Tstg
–40 to +85
°C
Note:
1. Maximum 50% duty cycle, maximum 1 µs pulse width
Optical and Electrical Characteristics (T
C = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Optical output power
P
O
50
mW
Kink free
Threshold current
Ith
45
70
mA
Slope efficiency
η
0.35
0.55
0.7
mW/mA
40 mW/ I
(45 mW) – I (5 mW)
Operating current
Iop
140
170
mA
P
O = 50 mW
LD Operating voltage
Vop
2.3
2.7
V
P
O = 50 mW
Lasing wavelength
λp
775
785
795
nm
P
O = 50 mW
Beam divergence (parallel)
θ//
8
9.5
12
deg.
P
O = 50 mW, FWHM
Beam divergence (perpendicular)
θ⊥
18
23
28
deg.
P
O = 50 mW, FWHM
Monitor current
Is
25
150
µA
P
O = 5 mW, VR (PD) = 5 V
Astigmatism
A
S
5
µm
P
O = 5 mW, NA = 0.4


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