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STB70NF03L-1 Datasheet(PDF) 3 Page - STMicroelectronics

Part No. STB70NF03L-1
Description  N-CHANNEL 30V - 0.0075 ohm - 70A D2PAK/I2PAK/TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB70NF03L-1 Datasheet(HTML) 3 Page - STMicroelectronics

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STB70NF03L STP70NF03L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V
ID = 35 A
RG = 4.7 Ω
VGS = 5 V
(Resistive Load, Figure 3)
22
165
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 15V ID= 70A VGS= 5V
22.5
9
12
30
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 15 V
ID = 35 A
RG = 4.7Ω,
VGS = 5 V
(Resistive Load, Figure 3)
21
25
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM ()
Source-drain Current
Source-drain Current (pulsed)
70
280
A
A
VSD (*)
Forward On Voltage
ISD = 70 A
VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 70 A
di/dt = 100A/µs
VDD = 20 V
Tj = 150°C
(see test circuit, Figure 5)
42
52
2.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance


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