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STB70NF03L-1 Datasheet(PDF) 1 Page - STMicroelectronics

Part No. STB70NF03L-1
Description  N-CHANNEL 30V - 0.0075 ohm - 70A D2PAK/I2PAK/TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB70NF03L-1 Datasheet(HTML) 1 Page - STMicroelectronics

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June 2003
NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: P70NF03L@ B70NF03L@
STB70NF03L STP70NF03L
STB70NF03L-1
N-CHANNEL 30V - 0.0075
Ω - 70A D²PAK/I²PAK/TO-220
LOW GATE CHARGE STripFET™ II POWER MOSFET
s
TYPICAL RDS(on) = 0.0075 Ω @ 10 V
s
OPTIMAL RDS(on) x Qg TRADE-OFF @ 5 V
s
CONDUCTION LOSSES REDUCED
s
SWITCHING LOSSES REDUCED
s
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This application specific Power MOSFET is the
third genaration of STMicroelectronis unique "Sin-
gle Feature Size™" strip-based process. The re-
sulting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS
s
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
TYPE
VDSS
RDS(on)
ID
STB70NF03L
STP70NF03L
STB70NF03L-1
30 V
30 V
30 V
< 0.0095
< 0.0095
< 0.0095
70 A
70 A
70 A
1
2
3
1
3
D2PAK
TO-263
(Suffix “T4”)
TO-220
1
2
3
I2PAK
TO-262
ABSOLUTE MAXIMUM RATINGS
(
•) Current limited by the package
(1) ISD ≤70A, di/dt ≤350A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 35A, VDD = 25V
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
30
V
VGS
Gate- source Voltage
± 18
V
ID(#)
Drain Current (continuous) at TC = 25°C
70
A
ID
Drain Current (continuous) at TC = 100°C
50
A
IDM(•)
Drain Current (pulsed)
280
A
Ptot
Total Dissipation at TC = 25°C
100
W
Derating Factor
0.67
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
5.5
V/ns
EAS (2)
Single Pulse Avalanche Energy
500
mJ
Tstg
Storage Temperature
-55 to 175
°C
Tj
Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM


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