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OM6053SJ Datasheet(PDF) 2 Page - International Rectifier |
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OM6053SJ Datasheet(HTML) 2 Page - International Rectifier |
2 / 2 page 3.1 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 OM6050SJ - OM6055SJ ABSOLUTE MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Parameter Symbol OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM6055SJ Unit Drain Source Voltage V DS 100 200 500 600 800 1000 V Drain Gate Voltage (R GS = 1.0 M ) V DGR 100 200 500 600 800 1000 V Continuous Drain Current @ T C = 25°C 2 I D 100 55 30 25 18 10 A Continuous Drain Current @ TC = 100°C 2 I D 43 23 13 10 7 4 A Pulsed Drain Current1 I DM 235 135 80 75 50 30 A Max. Power Dissipation @ T C = 25°C P D 280 W Max. Power Dissipation @ T C = 100°C P D 110 W Linear Derating Factor Junction-to-Case 2.22 W/°C Linear Derating Factor Junction-to-Ambient .025 W/°C Operating and Storage Temp. Range T J, Tstg -55 to +150 ° C Lead Temperature (1/16" from case for 10 sec.) 275 ° C Notes: 1. Pulse Test: Pulse Width £ 300 msec, Duty Cycle £ 2%. 2. Package Pin Limitation: 35 Amps. THERMAL RESISTANCE (MAXIMUM) @ T A = 25 C Junction-to-Case R thJC .45 ° C/W Junction-to-Ambient (Free Air Operation) R thJA 40 ° C/W PRELIMINARY ELECTRICAL CHARACTERISTICS (T C = 25°C unless otherwise noted) Characteristic Test Condition Symbol Part No. Min. Max. Units Gate Threshold Voltage V DS = VGS, ID = 250µA V GS(th) All 2.0 4.0 V Gate Source Leakage Current V GS = ±20 VDC I GSS All ±100 nA Off State Drain-Source Leakage V DS = VDSS x 0.8 T C = 25°C I DSS All 10 µA V GS = 0V T C = 125°C I DSS All .10 mA OM6050SJ 100 OM6051SJ 200 Drain-Source Breakdown Voltage V GS = 0V, ID = 250 µA V DSS OM6052SJ 500 V OM6053SJ 600 OM6054SJ 800 OM6055SJ 1000 OM6050SJ .014 OM6051SJ .030 Drain-Source Breakdown Voltage V GS = 10V, ID = ID25 x 0.5 R DS(on) OM6052SJ .160 OM6053SJ .230 OM6054SJ .500 OM6055SJ .800 The above data is preliminary. Please contact factory for additional data and the dynamic and switching characteristics. |
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