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DSEP12-12A Datasheet(PDF) 1 Page - IXYS Corporation

Part No. DSEP12-12A
Description  HiPerFRED Epitaxial Diode with soft recovery
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

DSEP12-12A Datasheet(HTML) 1 Page - IXYS Corporation

  DSEP12-12A Datasheet HTML 1Page - IXYS Corporation DSEP12-12A Datasheet HTML 2Page - IXYS Corporation  
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© 2000 IXYS All rights reserved
1 - 2
HiPerFREDTM Epitaxial Diode
with soft recovery
Features
q
International standard package
q
Planar passivated chips
q
Very short recovery time
q
Extremely low switching losses
q
Low I
RM-values
q
Soft recovery behaviour
q
Epoxy meets UL 94V-0
Applications
q
Antiparallel diode for high frequency
switching devices
q
Antisaturation diode
q
Snubber diode
q
Free wheeling diode in converters
and motor control circuits
q
Rectifiers in switch mode power
supplies (SMPS)
q
Inductive heating
q
Uninterruptible power supplies (UPS)
q
Ultrasonic cleaners and welders
Advantages
q
Avalanche voltage rated for reliable
operation
q
Soft reverse recovery for low
EMI/RFI
q
Low I
RM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
C
A
A = Anode, C = Cathode, TAB = Cathode
C
A
TO-220 AC
C (TAB)
Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 %
y Pulse Width = 300
ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
DSEP 12-12A
I
FAV
= 15 A
V
RRM = 1200 V
t
rr
= 40 ns
V
RSM
V
RRM
Type
V
V
1200
1200
DSEP 12-12A
Symbol
Conditions
Maximum Ratings
I
FRMS
35
A
I
FAVM
T
C = 125°C; rectangular, d = 0.5
15
A
I
FSM
T
VJ = 45°C; tp = 10 ms (50 Hz), sine
90
A
E
AS
T
VJ = 25°C; non-repetitive
8.7
mJ
I
AS = 9 A; L = 180 µH
I
AR
V
A = 1.25·VR typ.; f = 10 kHz; repetitive
0.9
A
T
VJ
-55...+175
°C
T
VJM
175
°C
T
stg
-55...+150
°C
P
tot
T
C = 25°C
95
W
M
d
mounting torque
0.4...0.6
Nm
Weight
typical
2
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
x
T
VJ = 25°C
V
R = VRRM
100
mA
T
VJ = 150°C VR = VRRM
0.5
mA
V
F
y
I
F = 15 A;
T
VJ = 150°C
1.79
V
T
VJ = 25°C
2.75
V
R
thJC
1.6
K/W
R
thCH
0.5
K/W
t
rr
I
F = 1 A; -di/dt = 100 A/
ms;
40
ns
V
R = 30 V; TVJ = 25°C
I
RM
V
R = 100 V;
I
F = 25 A; -diF/dt = 100 A/
ms4.5
A
T
VJ = 100°C


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