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Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage vs.
Reverse Diode
Junction Temperature
0
1
2
3
4
5
-50
0
50
100
150
T j , Junction Temperature (
o C)
0.01
0.1
1
10
100
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V SD (V)
T j = 25
o C
T j = 150
o C
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
35
40
45
50
Q G , Total Gate Charge (nC)
I D =7A
V DS =320V
V DS =400V
V DS =480V
1
100
10000
1
5
9
131721
2529
V DS (V)
f=1.0MHz
Ciss
Coss
Crss
SSM07N70CP,R-A
3/21/2005 Rev.2.01
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