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PBMB200A6 Datasheet(PDF) 1 Page - Nihon Inter Electronics Corporation |
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PBMB200A6 Datasheet(HTML) 1 Page - Nihon Inter Electronics Corporation |
1 / 3 page IGBT MODULE MODULE MODULE MODULE H H H H----Bridge 200A 600V Bridge 200A 600V Bridge 200A 600V Bridge 200A 600V PBMB200A6 PBMB200A6 PBMB200A6 PBMB200A6 CIRCUIT OUTLINE DRAWING MAXMUM RATINGS (Tc=25°C) Item Symbol PBMB200A6 Unit Collector-EmitterVoltage VCES 600 V Gate- EmitterVoltage VGES +/ -20 V DC IC 200 CollectorCurrent 1ms ICP 400 A CollectorPowerDissipation PC 780 W JunctionTemperature Range Tj -40 to +150 °C StorageTemperature Range Tstg -40 to +125 °C IsolationVoltage Terminal toBase AC,1min.) VISO 2500 V ModuleBase to Heatsink MountingTorque Bus Bar to Main Terminals FTOR 3 N •m ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-EmitterCut-OffCurrent ICES VCE=600V,VGE=0V - - 2.0 mA Gate-EmitterLeakage Current IGES VGE=+/-20V,VCE=0V - - 1.0 µA Collector-EmitterSaturation Voltage VCE(sat) IC=200A,VGE=15V - 2.1 2.6 V Gate-EmitterThresholdVoltage VGE(th) VCE=5V,IC=200mA 4.0 - 8.0 V InputCapacitance Cies VCE=10V,VGE=0V,f=1MHz - 20,000 - pF RiseTime tr - 0.15 0.3 Turn-onTime ton - 0.25 0.4 Fall Time tf - 0.2 0.35 SwitchingTime Turn-off Time toff VCC=300V RL= 3 ohm RG=3.6ohm VGE=+/-15V - 0.45 0.7 µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Unit DC IF 200 ForwardCurrent 1ms IFM 400 A Characteristic Symbol Test Condition Min. Typ. Max. Unit PeakForwardVoltage VF IF=200A,VGE=0V - 1.9 2.4 V Reverse RecoveryTime trr IF=200A,VGE=-10V,di/dt=200A/ µs - 0.15 0.25 µs THERMAL CHARACTERISTICS Characteristic Symbol Test Condition Min. Typ. Max. Unit IGBT - - 0.16 ThermalImpedance DIODE Rth(j-c) JunctiontoCase - - 0.38 °C/W 8-fasten-tabNo110 Dimension(mm) ApproximateWeight:650g |
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Similar Description - PBMB200A6 |
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