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PBMB75A6 Datasheet(PDF) 3 Page - Nihon Inter Electronics Corporation |
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PBMB75A6 Datasheet(HTML) 3 Page - Nihon Inter Electronics Corporation |
3 / 3 page PBMB75A6 1 10 100 0.05 0.1 0.2 0.5 1 2 5 Series Gate Impedance RG (Ω) Fig.7- Series Gate Impedance vs. Switching Time (Typical) VCC=300V IC=75A VG=±15V TC=25℃ tf tr ton toff 0 1234 0 25 50 75 100 125 150 Forward Voltage VF (V) Fig.8- Forward Characteristics of Free Wheeling Diode (Typical) TC=25℃ TC=125℃ 0 100 200 300 400 500 600 5 10 20 50 100 200 500 -di/dt (A/μs) Fig.9- Reverse Recovery Characteristics (Typical) IRrM trr IF=75A TC=25℃ 0 200 400 600 800 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 Collector to Emitter Voltage V CE (V) Fig.10- Reverse Bias Safe Operating Area (Typical) RG=10Ω VGE=±15V TC≦125℃ 10 -5 10 -4 10 -3 10 -2 10 -1 110 1 1x10 -3 2x10 -3 5x10 -3 1x10 -2 2x10 -2 5x10 -2 1x10 -1 2x10 -1 5x10 -1 1 Time t (s) Fig.11- Transient Thermal Impedance TC=25℃ 1 Shot Pulse FRD IGBT |
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Similar Description - PBMB75A6 |
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