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2SB939 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SB939 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page 1 Power Transistors 2SB939, 2SB939A Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262 and 2SD1262A s Features q High foward current transfer ratio hFE q High-speed switching q N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –7 –12 –8 45 1.3 150 –55 to +150 Unit V V V A A W ˚C ˚C 2SB939 2SB939A 2SB939 2SB939A TC=25°C Ta=25 °C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol ICBO IEBO VCEO hFE1 * hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = –60V, IE = 0 VCB = –80V, IE = 0 VEB = –7V, IC = 0 IC = –30mA, IB = 0 VCE = –3V, IC = –4A VCE = –3V, IC = –8A IC = –4A, IB = –8mA IC = –4A, IB = –8mA VCE = –10V, IC = – 0.5A, f = 1MHz IC = –4A, IB1 = –8mA, IB2 = 8mA, VCC = –50V min –60 –80 2000 500 typ 15 0.5 2 1 max –100 –100 –2 10000 –1.5 –2 Unit µA mA V V V MHz µs µs µs 2SB939 2SB939A 2SB939 2SB939A *h FE1 Rank classification Rank Q P hFE1 2000 to 5000 4000 to 10000 Internal Connection B C E Unit: mm 1:Base 2:Collector 3:Emitter N Type Package 8.5 ±0.2 6.0 ±0.5 1.5max. 0.8 ±0.1 5.08 ±0.5 2.54 ±0.3 1.1max. 0.5max. 1.0 ±0.1 3.4 ±0.3 2 13 Unit: mm 8.5 ±0.2 6.0 ±0.3 3.4 ±0.3 2.54 ±0.3 5.08 ±0.5 1.0 ±0.1 0.8 ±0.1 0 to 0.4 1.1 max. R0.5 R0.5 123 1:Base 2:Collector 3:Emitter N Type Package (DS) |
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