1

Power Transistors

2SB938, 2SB938A

Silicon PNP epitaxial planar type Darlington

For power amplification and switching

Complementary to 2SD1261 and 2SD1261A

q

q

High-speed switching

q

N type package enabling direct soldering of the radiating fin to

the printed circuit board, etc. of small electronic equipment.

Parameter

Collector to

base voltage

Collector to

emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

Ratings

–60

–80

–60

–80

–5

–8

–4

40

1.3

150

–55 to +150

Unit

V

V

V

A

A

W

˚C

˚C

2SB938

2SB938A

2SB938

2SB938A

Ta=25

°C

Parameter

Collector cutoff

current

Collector cutoff

current

Emitter cutoff current

Collector to emitter

voltage

Forward current transfer ratio

Base to emitter voltage

Collector to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

*

Conditions

min

–60

–80

1000

2000

typ

15

0.3

2

0.5

max

–200

–200

–500

–500

–2

10000

–2.5

–2

–4

Unit

µA

µA

mA

V

V

V

MHz

µs

µs

µs

2SB938

2SB938A

2SB938

2SB938A

2SB938

2SB938A

Internal Connection

Rank

Q

P

2000 to 5000 4000 to 10000

B

C

E

Unit: mm

1:Base

2:Collector

3:Emitter

N Type Package

8.5

±0.2

6.0

±0.5

1.5max.

0.8

±0.1

5.08

±0.5

2.54

±0.3

1.1max.

0.5max.

1.0

±0.1

3.4

±0.3

2

13

Unit: mm

8.5

±0.2

6.0

±0.3

3.4

±0.3

2.54

±0.3

5.08

±0.5

1.0

±0.1

0.8

±0.1

0 to 0.4

1.1 max.

R0.5

R0.5

123

1:Base

2:Collector

3:Emitter

N Type Package (DS)